239000002019 doping agent Substances 0.000 claims description 15.239000000758 substrate Substances 0.000 claims abstract description 24.125000001475 halogen functional group Chemical group 0.000 title claims abstract 10.239000007943 implant Substances 0.000 title claims abstract description 52.239000004065 semiconductor Substances 0.000 title claims abstract description 123.Application granted granted Critical Publication of US6949796B1 publication Critical patent/US6949796B1/en Status Expired - Fee Related legal-status Critical Current Anticipated expiration legal-status Critical Links Assignors: PETERSON, KIRK D., ZIMMERMAN, JEFFREY S., ELLIS-MONAGHAN, JOHN J. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Application filed by International Business Machines Corp filed Critical International Business Machines Corp Priority to US10/711,484 priority Critical patent/US6949796B1/en Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION reassignment INTERNATIONAL BUSINESS MACHINES CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Original Assignee International Business Machines Corp Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) Zimmerman Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Expired - Fee Related Application number US10/711,484 Inventor John J.
#HALO IMPLANT ION IOFF GAIN RO PDF#
Google Patents Halo implant in semiconductor structuresĭownload PDF Info Publication number US6949796B1 US6949796B1 US10/711,484 US71148404A US6949796B1 US 6949796 B1 US6949796 B1 US 6949796B1 US 71148404 A US71148404 A US 71148404A US 6949796 B1 US6949796 B1 US 6949796B1 Authority US United States Prior art keywords semiconductor region halo regions essentially Prior art date Legal status (The legal status is an assumption and is not a legal conclusion. Google Patents US6949796B1 - Halo implant in semiconductor structures 239000000463 material Substances 0.US6949796B1 - Halo implant in semiconductor structures.239000002019 doping agent Substances 0.000 claims abstract description 60.239000012535 impurity Substances 0.000 claims abstract description 67.239000000758 substrate Substances 0.000 claims abstract description 69.125000001475 halogen functional group Chemical group 0.000 title abstract description 60.239000007943 implant Substances 0.000 title claims abstract description 118.Assignors: GOTO, KEN-ICHI, HUANG, SHIH-SYUAN, SHEU, YI-MING, YU, TSUNG-HSING Publication of US20150200139A1 publication Critical patent/US20150200139A1/en Application granted granted Critical Publication of US9425099B2 publication Critical patent/US9425099B2/en Status Active legal-status Critical Current Anticipated expiration legal-status Critical Links ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). reassignment TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Application filed by Taiwan Semiconductor Manufacturing Co TSMC Ltd filed Critical Taiwan Semiconductor Manufacturing Co TSMC Ltd Priority to US14/156,496 priority Critical patent/US9425099B2/en Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. Original Assignee Taiwan Semiconductor Manufacturing Co TSMC Ltd Priority date (The priority date is an assumption and is not a legal conclusion. Taiwan Semiconductor Manufacturing Co TSMC Ltd ( en Inventor Tsung-Hsing Yu Shih-Syuan Huang Ken-Ichi Goto Yi-Ming Sheu Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Granted Application number US14/156,496 Other versions US9425099B2 Google Patents US20150200139A1 - Epitaxial channel with a counter-halo implant to improve analog gain US20150200139A1 - Epitaxial channel with a counter-halo implant to improve analog gain
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